SISF06DN-T1-GE3
detaildesc

SISF06DN-T1-GE3

Vishay Siliconix

型号:

SISF06DN-T1-GE3

封装:

PowerPAK® 1212-8SCD

批次:

-

数据手册:

pdf

描述:

COMMON-DRAIN DUAL N-CH 30V (S1-S

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 5452

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.083

    $1.083

  • 10

    $0.88255

    $8.8255

  • 100

    $0.68666

    $68.666

  • 500

    $0.582065

    $291.0325

  • 1000

    $0.474145

    $474.145

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual) Common Drain
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package PowerPAK® 1212-8SCD
Drain to Source Voltage (Vdss) 30V
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8SCD
Technology MOSFET (Metal Oxide)
Power - Max 5.2W (Ta), 69.4W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 101A (Tc)
Package Tape & Reel (TR)
Base Product Number SISF06