SISA35DN-T1-GE3
detaildesc

SISA35DN-T1-GE3

Vishay Siliconix

型号:

SISA35DN-T1-GE3

封装:

PowerPAK® 1212-8

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 10A/16A PPAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 16479

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.475

    $0.475

  • 10

    $0.36955

    $3.6955

  • 100

    $0.22173

    $22.173

  • 500

    $0.205333

    $102.6665

  • 1000

    $0.139631

    $139.631

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 19mOhm @ 9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.2W (Ta), 24W (Tc)
Series TrenchFET® Gen III
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 16A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISA35