SISA10DN-T1-GE3
detaildesc

SISA10DN-T1-GE3

Vishay Siliconix

型号:

SISA10DN-T1-GE3

封装:

PowerPAK® 1212-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 30A PPAK1212-8

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 4637

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.95

    $0.95

  • 10

    $0.8493

    $8.493

  • 100

    $0.662055

    $66.2055

  • 500

    $0.546915

    $273.4575

  • 1000

    $0.431775

    $431.775

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.7mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISA10