SIS435DNT-T1-GE3
detaildesc

SIS435DNT-T1-GE3

Vishay Siliconix

型号:

SIS435DNT-T1-GE3

封装:

PowerPAK® 1212-8

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 20V 30A PPAK1212-8

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1473

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.722

    $0.722

  • 10

    $0.63365

    $6.3365

  • 100

    $0.485545

    $48.5545

  • 500

    $0.3838

    $191.9

  • 1000

    $0.30704

    $307.04

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.4mOhm @ 13A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SIS435