SIS176LDN-T1-GE3
detaildesc

SIS176LDN-T1-GE3

Vishay Siliconix

型号:

SIS176LDN-T1-GE3

封装:

PowerPAK® 1212-8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 70 V (D-S) MOSFET POWE

购买数量:

递送:

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付款:

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库存 : 19985

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.855

    $0.855

  • 10

    $0.70015

    $7.0015

  • 100

    $0.544255

    $54.4255

  • 500

    $0.461301

    $230.6505

  • 1000

    $0.375782

    $375.782

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 35 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.9mOhm @ 10A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.6V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 70 V
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 12.9A (Ta), 42.3A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 4.5V
Package Tape & Reel (TR)