SIRS700DP-T1-GE3
detaildesc

SIRS700DP-T1-GE3

Vishay Siliconix

型号:

SIRS700DP-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 100 V (D-S) MOSFET POW

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 4814

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $3.135

    $3.135

  • 10

    $2.6315

    $26.315

  • 100

    $2.128665

    $212.8665

  • 500

    $1.892134

    $946.067

  • 1000

    $1.62014

    $1620.14

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 7.4W (Ta),132W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 127A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)