SIRA88BDP-T1-GE3
detaildesc

SIRA88BDP-T1-GE3

Vishay Siliconix

型号:

SIRA88BDP-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 19A/40A PPAK SO8

购买数量:

递送:

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付款:

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库存 : 5990

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.494

    $0.494

  • 10

    $0.4218

    $4.218

  • 100

    $0.29317

    $29.317

  • 500

    $0.228874

    $114.437

  • 1000

    $0.18602

    $186.02

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.8W (Ta), 17W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRA88