SIRA50DP-T1-RE3
Vishay Siliconix
型号:
SIRA50DP-T1-RE3
品牌:
封装:
PowerPAK® SO-8
批次:
-
数据手册:
描述:
MOSFET N-CH 40V 62.5A/100A PPAK
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 8445 pF @ 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 194 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 40 V |
| Power Dissipation (Max) | 6.25W (Ta), 100W (Tc) |
| Series | TrenchFET® Gen IV |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 62.5A (Ta), 100A (Tc) |
| Vgs (Max) | +20V, -16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SIRA50 |
