SIRA20BDP-T1-GE3
detaildesc

SIRA20BDP-T1-GE3

Vishay Siliconix

型号:

SIRA20BDP-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 25V 82A/335A PPAK

购买数量:

递送:

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付款:

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库存 : 10895

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.501

    $1.501

  • 10

    $1.23025

    $12.3025

  • 100

    $0.957125

    $95.7125

  • 500

    $0.811262

    $405.631

  • 1000

    $0.660858

    $660.858

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 6.3W (Ta), 104W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 82A (Ta), 335A (Tc)
Vgs (Max) +16V, -12V
Package Tape & Reel (TR)
Base Product Number SIRA20