SIRA12BDP-T1-GE3
detaildesc

SIRA12BDP-T1-GE3

Vishay Siliconix

型号:

SIRA12BDP-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 27A/60A PPAK SO8

购买数量:

递送:

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付款:

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库存 : 11515

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.684

    $0.684

  • 10

    $0.59375

    $5.9375

  • 100

    $0.411065

    $41.1065

  • 500

    $0.343463

    $171.7315

  • 1000

    $0.292306

    $292.306

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 5W (Ta), 38W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRA12