SIR873DP-T1-GE3
detaildesc

SIR873DP-T1-GE3

Vishay Siliconix

型号:

SIR873DP-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 150V 37A PPAK SO-8

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1805 pF @ 75 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 47.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 104W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SIR873