SIR512DP-T1-RE3
detaildesc

SIR512DP-T1-RE3

Vishay Siliconix

型号:

SIR512DP-T1-RE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 100 V (D-S) MOSFET POW

购买数量:

递送:

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付款:

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库存 : 330

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.938

    $1.938

  • 10

    $1.6131

    $16.131

  • 100

    $1.283545

    $128.3545

  • 500

    $1.086059

    $543.0295

  • 1000

    $0.9215

    $921.5

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 6W (Ta), 96.2W (Tc)
Series -
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 25.1A (Ta), 100A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)