SIR5102DP-T1-RE3
detaildesc

SIR5102DP-T1-RE3

Vishay Siliconix

型号:

SIR5102DP-T1-RE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 100 V (D-S) MOSFET POW

购买数量:

递送:

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付款:

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库存 : 5987

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.793

    $2.793

  • 10

    $2.318

    $23.18

  • 100

    $1.844805

    $184.4805

  • 500

    $1.561002

    $780.501

  • 1000

    $1.32449

    $1324.49

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.1mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Series TrenchFET® Gen V
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 110A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)