SIR4608DP-T1-GE3
detaildesc

SIR4608DP-T1-GE3

Vishay Siliconix

型号:

SIR4608DP-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 60 V (D-S) MOSFET POWE

购买数量:

递送:

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付款:

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库存 : 6050

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.0545

    $1.0545

  • 10

    $0.86355

    $8.6355

  • 100

    $0.67203

    $67.203

  • 500

    $0.569582

    $284.791

  • 1000

    $0.46399

    $463.99

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.8mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 13.1A (Ta), 42.8A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIR4608