SIR186DP-T1-RE3
detaildesc

SIR186DP-T1-RE3

Vishay Siliconix

型号:

SIR186DP-T1-RE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 60A PPAK SO-8

购买数量:

递送:

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付款:

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库存 : 8113

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.1495

    $1.1495

  • 10

    $0.9443

    $9.443

  • 100

    $0.734445

    $73.4445

  • 500

    $0.622535

    $311.2675

  • 1000

    $0.50712

    $507.12

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.6V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 5W (Ta), 57W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 60A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SIR186