SIR122DP-T1-RE3
detaildesc

SIR122DP-T1-RE3

Vishay Siliconix

型号:

SIR122DP-T1-RE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 80V 16.7A/59.6A PPAK

购买数量:

递送:

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付款:

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库存 : 15561

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.9025

    $0.9025

  • 10

    $0.7353

    $7.353

  • 100

    $0.57228

    $57.228

  • 500

    $0.485051

    $242.5255

  • 1000

    $0.395124

    $395.124

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.4mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 5.2W (Ta), 65.7W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 16.7A (Ta), 59.6A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIR122