SIJH5700E-T1-GE3
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SIJH5700E-T1-GE3

Vishay Siliconix

型号:

SIJH5700E-T1-GE3

封装:

PowerPAK® 8 x 8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 150 V (D-S) 175C MOSFE

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.1mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 8 x 8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 174A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)