SIHP8N50D-GE3
detaildesc

SIHP8N50D-GE3

Vishay Siliconix

型号:

SIHP8N50D-GE3

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 500V 8.7A TO220AB

购买数量:

递送:

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付款:

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库存 : 70

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.2825

    $1.2825

  • 10

    $1.14665

    $11.4665

  • 100

    $0.89376

    $89.376

  • 500

    $0.73834

    $369.17

  • 1000

    $0.582901

    $582.901

  • 2000

    $0.544036

    $1088.072

  • 5000

    $0.516838

    $2584.19

  • 10000

    $0.497401

    $4974.01

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 527 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 156W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHP8