SIHP6N80AE-GE3
detaildesc

SIHP6N80AE-GE3

Vishay Siliconix

型号:

SIHP6N80AE-GE3

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 5A TO220AB

购买数量:

递送:

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付款:

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库存 : 971

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.5485

    $1.5485

  • 10

    $1.26445

    $12.6445

  • 100

    $0.98325

    $98.325

  • 500

    $0.833454

    $416.727

  • 1000

    $0.678946

    $678.946

  • 2000

    $0.639141

    $1278.282

  • 5000

    $0.608703

    $3043.515

  • 10000

    $0.580612

    $5806.12

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 950mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 62.5W (Tc)
Series E
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Vgs (Max) ±30V
Package Tube
Base Product Number SIHP6