SIHP33N60E-GE3
detaildesc

SIHP33N60E-GE3

Vishay Siliconix

型号:

SIHP33N60E-GE3

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 33A TO220AB

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 700

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $5.5955

    $5.5955

  • 10

    $5.0236

    $50.236

  • 100

    $4.116255

    $411.6255

  • 500

    $3.504094

    $1752.047

  • 1000

    $2.95526

    $2955.26

  • 2000

    $2.807497

    $5614.994

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 278W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHP33