SIHP11N80E-BE3
detaildesc

SIHP11N80E-BE3

Vishay Siliconix

型号:

SIHP11N80E-BE3

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 800V

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 906

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $3.23

    $3.23

  • 10

    $2.7094

    $27.094

  • 100

    $2.19165

    $219.165

  • 500

    $1.948165

    $974.0825

  • 1000

    $1.668124

    $1668.124

  • 2000

    $1.570711

    $3141.422

  • 5000

    $1.506938

    $7534.69

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 179W (Tc)
Series E
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube