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SIHK185N60EF-T1GE3
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SIHK185N60EF-T1GE3

Vishay Siliconix

型号:

SIHK185N60EF-T1GE3

封装:

PowerPAK®10 x 12

批次:

-

数据手册:

pdf

描述:

EF SERIES POWER MOSFET WITH FAST

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 193mOhm @ 9.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package PowerPAK®10 x 12
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 114W (Tc)
Series EF
Package / Case 8-PowerBSFN
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)