SIHJ8N60E-T1-GE3
detaildesc

SIHJ8N60E-T1-GE3

Vishay Siliconix

型号:

SIHJ8N60E-T1-GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 8A PPAK SO-8

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2982

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.0045

    $2.0045

  • 10

    $1.8031

    $18.031

  • 100

    $1.449035

    $144.9035

  • 500

    $1.190502

    $595.251

  • 1000

    $0.986414

    $986.414

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 754 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 520mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 89W (Tc)
Series -
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SIHJ8