SIHJ10N60E-T1-GE3
Vishay Siliconix
型号:
SIHJ10N60E-T1-GE3
品牌:
封装:
PowerPAK® SO-8
批次:
-
数据手册:
描述:
MOSFET N-CH 600V 10A PPAK SO-8
购买数量:
递送:
付款:
库存 : 67
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$2.6695
$2.6695
10
$2.2192
$22.192
100
$1.76624
$176.624
500
$1.494521
$747.2605
1000
$1.268079
$1268.079
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 784 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 89W (Tc) |
| Series | E |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Cut Tape (CT) |
| Base Product Number | SIHJ10 |
