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SIHH24N65E-T1-GE3
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SIHH24N65E-T1-GE3

Vishay Siliconix

型号:

SIHH24N65E-T1-GE3

封装:

PowerPAK® 8 x 8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 650V 23A PPAK 8 X 8

购买数量:

递送:

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付款:

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库存 : 821

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $6.213

    $6.213

  • 10

    $5.3276

    $53.276

  • 100

    $4.440015

    $444.0015

  • 500

    $3.917648

    $1958.824

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2814 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 202W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SIHH24