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SIHH14N65E-T1-GE3
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SIHH14N65E-T1-GE3

Vishay Siliconix

型号:

SIHH14N65E-T1-GE3

封装:

PowerPAK® 8 x 8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 650V 15A PPAK 8 X 8

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1712 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 260mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 156W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SIHH14