SIHG64N65E-GE3
detaildesc

SIHG64N65E-GE3

Vishay Siliconix

型号:

SIHG64N65E-GE3

封装:

TO-247AC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 650V 64A TO247AC

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7497 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 369 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 47mOhm @ 32A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-247AC
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 520W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHG64