SIHG018N60E-GE3
detaildesc

SIHG018N60E-GE3

Vishay Siliconix

型号:

SIHG018N60E-GE3

封装:

TO-247AC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 99A TO247AC

购买数量:

递送:

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付款:

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库存 : 168

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $15.7225

    $15.7225

  • 10

    $13.8529

    $138.529

  • 100

    $11.980735

    $1198.0735

  • 500

    $10.857512

    $5428.756

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7612 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 228 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 23mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247AC
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 524W (Tc)
Series E
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 99A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHG018