SIHD6N80AE-GE3
Vishay Siliconix
型号:
SIHD6N80AE-GE3
品牌:
封装:
TO-252AA
批次:
-
数据手册:
描述:
MOSFET N-CH 800V 5A DPAK
购买数量:
递送:
付款:
库存 : 2980
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.2065
$1.2065
10
$0.9899
$9.899
100
$0.76969
$76.969
500
$0.652422
$326.211
1000
$0.531468
$531.468
2000
$0.500318
$1000.636
5000
$0.476492
$2382.46
10000
$0.454499
$4544.99
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Series | E |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHD6 |
