SIHD180N60E-GE3
Vishay Siliconix
型号:
SIHD180N60E-GE3
品牌:
封装:
D-Pak
批次:
-
数据手册:
描述:
MOSFET N-CH 600V 19A TO252AA
购买数量:
递送:
付款:
库存 : 2980
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$2.622
$2.622
10
$2.20115
$22.0115
100
$1.78068
$178.068
500
$1.582795
$791.3975
1000
$1.35526
$1355.26
2000
$1.276126
$2552.252
5000
$1.224312
$6121.56
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 9.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D-Pak |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 156W (Tc) |
| Series | E |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHD180 |
