SIHB12N65E-GE3
Vishay Siliconix
型号:
SIHB12N65E-GE3
品牌:
封装:
D²PAK (TO-263)
批次:
-
数据手册:
描述:
MOSFET N-CH 650V 12A D2PAK
购买数量:
递送:
付款:
库存 : 729
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$2.679
$2.679
10
$2.22585
$22.2585
100
$1.771655
$177.1655
500
$1.4991
$749.55
1000
$1.271974
$1271.974
2000
$1.208372
$2416.744
5000
$1.162942
$5814.71
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1224 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 156W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHB12 |
