SIE882DF-T1-GE3
detaildesc

SIE882DF-T1-GE3

Vishay Siliconix

型号:

SIE882DF-T1-GE3

封装:

10-PolarPAK® (L)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 25V 60A 10POLARPAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2760

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.2895

    $2.2895

  • 10

    $2.0596

    $20.596

  • 100

    $1.65547

    $165.547

  • 500

    $1.360096

    $680.048

  • 1000

    $1.126928

    $1126.928

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 12.5 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.4mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 10-PolarPAK® (L)
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Series TrenchFET®
Package / Case 10-PolarPAK® (L)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIE882