SIE822DF-T1-GE3
detaildesc

SIE822DF-T1-GE3

Vishay Siliconix

型号:

SIE822DF-T1-GE3

封装:

10-PolarPAK® (S)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 50A 10POLARPAK

购买数量:

递送:

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付款:

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库存 : 1078

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.6885

    $2.6885

  • 10

    $2.41585

    $24.1585

  • 100

    $1.941515

    $194.1515

  • 500

    $1.595164

    $797.582

  • 1000

    $1.321716

    $1321.716

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.4mOhm @ 18.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 10-PolarPAK® (S)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Series TrenchFET®
Package / Case 10-PolarPAK® (S)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIE822