首页 / 单 FET,MOSFET / SIDR626LEP-T1-RE3
SIDR626LEP-T1-RE3
detaildesc

SIDR626LEP-T1-RE3

Vishay Siliconix

型号:

SIDR626LEP-T1-RE3

封装:

PowerPAK® SO-8DC

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 60 V (D-S) 175C MOSFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 48.7A (Ta), 218A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)