SIDR392DP-T1-GE3

Vishay Siliconix

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SIDR392DP-T1-GE3

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Package:

PowerPAK® SO-8DC

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Description:

MOSFET N-CH 30V 82A/100A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	9530 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	188 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.62mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PowerPAK® SO-8DC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	82A (Ta), 100A (Tc)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIDR392