SIDC105D120H8X1SA1
Infineon Technologies
型号:
SIDC105D120H8X1SA1
封装:
Sawn on foil
批次:
-
数据手册:
描述:
DIODE GP 1.2KV 200A WAFER
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Product Status | Discontinued at Digi-Key |
| Supplier Device Package | Sawn on foil |
| Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
| Series | - |
| Package / Case | Die |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.41 V @ 45 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package | Bulk |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Current - Average Rectified (Io) | 200A |
| Base Product Number | SIDC105D |
