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SIDC09D60E6YX1SA1
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SIDC09D60E6YX1SA1

Infineon Technologies

Product No:

SIDC09D60E6YX1SA1

Manufacturer:

Infineon Technologies

Package:

Sawn on foil

Batch:

-

Datasheet:

pdf

Description:

DIODE GP 600V 20A WAFER

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F -
Reverse Recovery Time (trr) 150 ns
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package Sawn on foil
Current - Reverse Leakage @ Vr 27 µA @ 600 V
Series -
Package / Case Die
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 600 V
Package Bulk
Operating Temperature - Junction -55°C ~ 150°C
Current - Average Rectified (Io) 20A
Base Product Number SIDC09D60