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SIB437EDKT-T1-GE3
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SIB437EDKT-T1-GE3

Vishay Siliconix

型号:

SIB437EDKT-T1-GE3

封装:

PowerPAK® TSC75-6

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 8V 9A PPAK TSC75-6

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 34mOhm @ 3A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 700mV @ 250µA
Supplier Device Package PowerPAK® TSC75-6
Drain to Source Voltage (Vdss) 8 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Series TrenchFET®
Package / Case PowerPAK® TSC-75-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Vgs (Max) ±5V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Package Tape & Reel (TR)
Base Product Number SIB437