SIA4263DJ-T1-GE3
detaildesc

SIA4263DJ-T1-GE3

Vishay Siliconix

型号:

SIA4263DJ-T1-GE3

封装:

PowerPAK® SC-70-6

批次:

-

数据手册:

pdf

描述:

P-CHANNEL 20-V (D-S) MOSFET POWE

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 6010

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.551

    $0.551

  • 10

    $0.46835

    $4.6835

  • 100

    $0.325565

    $32.5565

  • 500

    $0.254182

    $127.091

  • 1000

    $0.206606

    $206.606

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1825 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 52.2 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package PowerPAK® SC-70-6
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 3.29W (Ta), 15.6W (Tc)
Series TrenchFET® Gen III
Package / Case PowerPAK® SC-70-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta), 12A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)