SI8823EDB-T2-E1
detaildesc

SI8823EDB-T2-E1

Vishay Siliconix

型号:

SI8823EDB-T2-E1

封装:

4-MICRO FOOT® (0.8x0.8)

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 20V 2.7A 4MICRO FOOT

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 5986

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.3705

    $0.3705

  • 10

    $0.28975

    $2.8975

  • 100

    $0.17385

    $17.385

  • 500

    $0.160949

    $80.4745

  • 1000

    $0.10945

    $109.45

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 95mOhm @ 1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 800mV @ 250µA
Supplier Device Package 4-MICRO FOOT® (0.8x0.8)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 900mW (Tc)
Series TrenchFET® Gen III
Package / Case 4-XFBGA
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8823