SI8808DB-T2-E1
detaildesc

SI8808DB-T2-E1

Vishay Siliconix

型号:

SI8808DB-T2-E1

封装:

4-Microfoot

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 4MICROFOOT

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 6122

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4085

    $0.4085

  • 10

    $0.3496

    $3.496

  • 100

    $0.261155

    $26.1155

  • 500

    $0.205181

    $102.5905

  • 1000

    $0.158546

    $158.546

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 95mOhm @ 1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package 4-Microfoot
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 500mW (Ta)
Series TrenchFET®
Package / Case 4-UFBGA
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8808