SI8481DB-T1-E1
Vishay Siliconix
型号:
SI8481DB-T1-E1
品牌:
封装:
4-MICRO FOOT® (1.6x1.6)
批次:
-
数据手册:
描述:
MOSFET P-CH 20V 9.7A 4MICRO FOOT
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 3A, 4.5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 4-MICRO FOOT® (1.6x1.6) |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 2.8W (Tc) |
| Series | TrenchFET® Gen III |
| Package / Case | 4-UFBGA |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI8481 |
