SI8415DB-T1-E1
detaildesc

SI8415DB-T1-E1

Vishay Siliconix

型号:

SI8415DB-T1-E1

封装:

4-Microfoot

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 12V 5.3A 4MICROFOOT

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 37mOhm @ 1A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package 4-Microfoot
Drain to Source Voltage (Vdss) 12 V
Power Dissipation (Max) 1.47W (Ta)
Series TrenchFET®
Package / Case 4-XFBGA, CSPBGA
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8415