SI7898DP-T1-E3
detaildesc

SI7898DP-T1-E3

Vishay Siliconix

Product No:

SI7898DP-T1-E3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 150V 3A PPAK SO-8

Quantity:

Delivery:

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Payment:

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In Stock : 17550

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.672

    $1.672

  • 10

    $1.50005

    $15.0005

  • 100

    $1.205835

    $120.5835

  • 500

    $0.990679

    $495.3395

  • 1000

    $0.820857

    $820.857

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 1.9W (Ta)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SI7898