SI7888DP-T1-E3
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SI7888DP-T1-E3

Vishay Siliconix

型号:

SI7888DP-T1-E3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 9.4A PPAK SO-8

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12mOhm @ 12.4A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.8W (Ta)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI7888