SI7129DN-T1-GE3
detaildesc

SI7129DN-T1-GE3

Vishay Siliconix

型号:

SI7129DN-T1-GE3

封装:

PowerPAK® 1212-8

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 35A PPAK1212-8

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 12381

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.9025

    $0.9025

  • 10

    $0.80655

    $8.0655

  • 100

    $0.628995

    $62.8995

  • 500

    $0.519574

    $259.787

  • 1000

    $0.410191

    $410.191

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -50°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3345 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.4mOhm @ 14.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI7129