SI6562DQ-T1-GE3
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SI6562DQ-T1-GE3

Vishay Siliconix

型号:

SI6562DQ-T1-GE3

封装:

8-TSSOP

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 20V 8-TSSOP

购买数量:

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产品信息

参数信息

用户指南

FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Supplier Device Package 8-TSSOP
Drain to Source Voltage (Vdss) 20V
Series TrenchFET®
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 1W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C -
Package Cut Tape (CT)
Base Product Number SI6562