SI5513DC-T1-GE3
Vishay Siliconix
型号:
SI5513DC-T1-GE3
品牌:
封装:
1206-8 ChipFET™
批次:
-
数据手册:
描述:
MOSFET N/P-CH 20V 3.1A 1206-8
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drain to Source Voltage (Vdss) | 20V |
| Series | TrenchFET® |
| Package / Case | 8-SMD, Flat Lead |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.1A |
| Package | Tape & Reel (TR) |
| Base Product Number | SI5513 |
