SI5513CDC-T1-E3
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SI5513CDC-T1-E3

Vishay Siliconix

型号:

SI5513CDC-T1-E3

封装:

1206-8 ChipFET™

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 20V 4A 1206-8

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 1206-8 ChipFET™
Drain to Source Voltage (Vdss) 20V
Series TrenchFET®
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Power - Max 3.1W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 4A, 3.7A
Package Tape & Reel (TR)
Base Product Number SI5513