SI4932DY-T1-GE3
detaildesc

SI4932DY-T1-GE3

Vishay Siliconix

型号:

SI4932DY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 30V 8A 8-SOIC

购买数量:

递送:

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付款:

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库存 : 2544

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.2825

    $1.2825

  • 10

    $1.14665

    $11.4665

  • 100

    $0.89376

    $89.376

  • 500

    $0.73834

    $369.17

  • 1000

    $0.582901

    $582.901

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 15mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30V
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 3.2W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8A
Package Tape & Reel (TR)
Base Product Number SI4932